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Characteristics of silicon nanowires, a novel semiconductor nanomaterial

wallpapers News 2020-05-28
Silicon nanowires is a new type of one-dimensional semiconductor nanomaterials, line body in about 10 nm in diameter, and inside the crystal nucleus is single crystal silicon, a SiO2 layer, outer layer due to their unique optical, electrical properties, such as quantum confinement effect and coulomb blockage effect caused extensive concern of the tech world, logic gates and counter in the microelectronics circuit, field emission devices and other electronic devices, nano sensors and other auxiliary synthesis of nanomaterials in the template applied research has made certain progress. At present, there are two main preparation methods of nano-electronic devices, namely "top-down" method and "bottom-up" method. The so-called top-down method refers to the preparation of nanostructures and devices by using thin film growth and nano-lithography technology (electron beam lithography, etc.) starting from bulk materials. The bottom-up method refers to the self-assembly and growth of the required nanomaterials and structures from atoms and molecules, which requires the control of the structure, components, size and position of the materials during the growth process, so as to directly grow the nanomaterials with the desired structure and performance. At present, the research on silicon nanowire nanoscale electronic devices mainly focuses on the top-down preparation method, that is, on the basis of the preparation process of microelectronic devices, the preparation of nanowire nanoscale electronic devices is improved to prepare the nanoscale electronic devices, while the bottom-up method to study silicon nanowire nanoscale electronic devices is still in the initial stage..
 

 
Nanowires are one-dimensional materials that are limited to less than 100 nanometers laterally and vertically. Nanowires are also known as "quantum wires" because the effects of quantum mechanics are obvious at this scale.

Silicon nanoparticles are crystalline silicon particles less than 5 nanometres (1 billion billionths of a metre) in diameter. Nanometer silicon powder has the characteristics of high purity, small particle size and uniform distribution. With the characteristics of large surface area, high surface activity and low packing density, the product is non-toxic and tasteless. Nanometer silicon powder is a new generation of photoelectric semiconductor material with wide gap energy semiconductor and high power light source material.

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Tag: Silicon nano